In this study, CIGS ultrathin films of 52 nm, 89 nm, 183 nm and 244 nm thicknesses were
grown on a n-Si substrate using PLD technique, then Ag/CIGS/Si/Al hetero-junction solar …

Discusses the influence of the shape of the geometric surface of a photovoltaic battery (PVB)
on its effectiveness. The features of photovoltaic systems based on silicon modules with …

Abstract Ag/CIGS/n-Si/Al solar cells which were formed basing ultrathin film thickness by
Pulse Laser Deposition (PLD) method, to be used as a sub-solar cell in tandem solar cells …

Selenization or sulphurization is a standard method for developing copper-selenium-based
ternary to quinary compounds. The route proved effective, but there are concerns about the …

The effect of varying the thickness of Silicon window layer, the band gap of CIGS absorber
layer and the temperature of the junction on the photovoltaic characteristics of CIGS/Si …

In this work, a metal–semiconductor diode in the form of Au/4H-SiC is fabricated, and the
electrical properties of this device are systematically examined under dark and different …

Abstract In/Cu 2 ZnSnTe 4/Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4
(CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room …

A self-powered photodetector (PD) based on n-type ZnO/p-type small-molecule copper (II)
phthalocyanine (CuPc) inorganic/organic heterojunction film deposited on FTO substrate …

Obtaining the physical mechanism of photoelectric transfer in quantum-dot (QD) photocells
may be one strategy to boost the photovoltaic conversion efficiency. In this work, we …

In this study, P3HT: PCBM polymer-based solar cell devices with TiO 2 and ZnO electron
selective layers were separately investigated to compare effects of metal oxide layer in the …