Low voltage tunnel field-effect transistor (TFET) and method of making same
(57) ABSTRACT A low voltage tunnel field effect transistor includes a pn tunneljunction, a
gate-dielectric, a gate, a source-contact, and a drain-contact. The pn tunnel junction includes …
gate-dielectric, a gate, a source-contact, and a drain-contact. The pn tunnel junction includes …
Model compression in binary coded image based object detection
K Chen, JUN Bongjin, YJ Chiu, T Kim, D Kim - US Patent 9,697,443, 2017 - Google Patents
US9697443B2 - Model compression in binary coded image based object detection - Google
Patents US9697443B2 - Model compression in binary coded image based object detection …
Patents US9697443B2 - Model compression in binary coded image based object detection …
Object detection using binary coded images and multi-stage cascade classifiers
Techniques related to object detection using directional filtering are discussed. Such
techniques may include determining directional weighted averages for pixels of an input …
techniques may include determining directional weighted averages for pixels of an input …
Semiconductor device and method of manufacturing the same
K Ikeda, T Tezuka - US Patent 8,492,793, 2013 - Google Patents
Conventionally, in a tunnel FET (TFET) having a germa nium (Ge) channel, Source, channel
and drain are formed by means of a pinjunction formed by ion implantation. A current drive …
and drain are formed by means of a pinjunction formed by ion implantation. A current drive …
Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
A Basu, A Majumdar, JW Sleight - US Patent 9,564,514, 2017 - Google Patents
An approach to providing a barrier in a vertical field effect transistor with low effective mass
channel materials wherein the forming of the barrier includes forming a first source/drain …
channel materials wherein the forming of the barrier includes forming a first source/drain …
Semiconductor device and manufacturing method thereof
M Goto, A Hokazono - US Patent App. 14/309,639, 2015 - Google Patents
BACKGROUND 0003. In recent years, a TFET (Tunnel Field-Effect Tran sistor) using a
quantum-mechanical effect of electrons has been developed. The TFET causes BTBT (Band …
quantum-mechanical effect of electrons has been developed. The TFET causes BTBT (Band …
Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
A Basu, A Majumdar, JW Sleight - US Patent 9,337,255, 2016 - Google Patents
An approach to providing a barrier in a vertical field effect transistor with low effective mass
channel materials wherein the forming of the barrier includes forming a first source/drain …
channel materials wherein the forming of the barrier includes forming a first source/drain …
A method of inhibiting leakage current of tunneling transistor, and the corresponding device and a preparation method thereof
R Huang, Q Huang, C Wu, J Wang… - US Patent App. 14 …, 2016 - Google Patents
Provided are a method for Suppressing a leakage current of a tunnel field-effect transistor
(TFET), a corresponding device, and a manufacturing method, related to the field of field …
(TFET), a corresponding device, and a manufacturing method, related to the field of field …
Model compression in binary coded image based object detection
K Chen, JUN Bongjin, YJ Chiu, T Kim, D Kim - US Patent 9,940,550, 2018 - Google Patents
Techniques related to object detection using binary coded images are discussed. Such
techniques may include performing object detection based on multiple spatial correlation …
techniques may include performing object detection based on multiple spatial correlation …
Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
A Basu, A Majumdar, JW Sleight - US Patent 9,337,309, 2016 - Google Patents
An approach to providing a barrier in a vertical field effect transistor with low effective mass
channel materials wherein the forming of the barrier includes forming a first source/drain …
channel materials wherein the forming of the barrier includes forming a first source/drain …