The write/erase characteristics of Germanium nanocrystal memory device are modeled
using single-charge tunneling theory with quantum confinement and Coulomb blockade …

A floating gate for a field effect transistor (and method for forming the same and method of
forming a uniform nano particle array), includes a plurality of discrete nanoparticles in which …

Publisher Summary The aim of this chapter is to review the prospects for the development
and practical introduction of ultra small electron devices, including nanoscale field-effect …

In this study, we have developed a SiGe dot floating-gate flash memory with high-K dielectric
(HfO/sub 2/) tunneling oxide. Using SiGe dots and HfO/sub 2/tunneling oxide, a low …

This book reviews research on single-electron devices and circuits in silicon. These devices
provide a means to control electronic charge at the one-electron level and are promising …

Si nanocrystals and nanochains, prepared by material synthesis, provide a means to define
nanoscale devices using growth rather than lithographic techniques. Electronic transport in …

We investigated the dependence of implantation dose on the charge storage characteristics
of large-area n-channel metal–oxide–semiconductor field-effect transistors with 1-keV Si+ …

Surface traps, or traps at the interface of the nanocrystal and the surrounding matrix, play an
important role in the charge retention performance of nanocrystal memory transistors. In this …

Publisher Summary This chapter reviews research and development of ultrasmall electron
devices, including nanoscale field effect transistors (FETs), single-electron transistors …

Silicon nitride layer, in which a plurality of nanoclusters are Sandwiched between oxide
layers. The nanoclusters and the Silicon nitride make up a Storage region, which is particu …