The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

In this paper operational transconductance amplifiers (OTA) were designed with nanowire
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …

A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET)
structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a …

This paper presents a Vertical Line-Tunneling FET (VLTFET) optimized for superior
performance in analog applications. The saturation mechanism, DC, and small-signal …

This paper presents the comparison of Low-Dropout Voltage Regulators (LDOs) designed
with Nanowire (NW-TFET) and Line Tunnel FET (Line-TFET), in which the transistors were …

In this work, we propose and investigate a new pocket‐based Si0. 55Ge0. 45/Si gate normal
tunnel FET design employing a gate over source with a single lateral pocket (GSLP) with …

Abstract An Operational Transconductance Amplifier (OTA) designed with SiGe-source
nanowire Tunnel-FETs is presented and compared with OTAs designed with Si nanowire …

In this work, a Gate-All-Around Nanosheet transistor (GAA-NSH) is used to design an
operational transconductance amplifier (OTA) operating from room temperature to 200° C. A …

Current mirrors (CMs) are essential building blocks for biasing integrated circuits. The gate-
all-around silicon nanosheet MOSFETs (GAA-NS) are excellent candidates for the sub 7 nm …

This paper presents a double‐gate line‐tunneling field‐effect transistor (DGLTFET) device
optimized for superior analog performance. DGLTFET has thrice the on currents I on, at least …