Tunable broadband absorber based on a layered resonant structure with a Dirac semimetal

W Li, J Ma, H Zhang, S Cheng, W Yang, Z Yi… - Physical Chemistry …, 2023 - pubs.rsc.org
With the development of science and technology, intermediate infrared technology has
gained more and more attention in recent years. In the research described in this paper, a …

High sensitivity five band tunable metamaterial absorption device based on block like Dirac semimetals

S Cheng, W Li, H Zhang, MN Akhtar, Z Yi, Q Zeng… - Optics …, 2024 - Elsevier
This paper proposes a metamaterial absorption device (MAD) based on Block Dirac
semimetal (BDS), which exhibits five band perfect absorption in 5.96 THz, 7.86 THz, 9.84 …

Multi-functional metasurface: ultra-wideband/multi-band absorption switching by adjusting guided-mode resonance and local surface plasmon resonance effects

W Li, S Cheng, H Zhang, Z Yi, B Tang… - Communications in …, 2024 - iopscience.iop.org
This study introduces an innovative dual-tunable absorption film with the capability to switch
between ultra-wideband and narrowband absorption. By manipulating the temperature, the …

Elemental Topological Dirac Semimetal α‐Sn with High Quantum Mobility

LD Anh, K Takase, T Chiba, Y Kota… - Advanced …, 2021 - Wiley Online Library
Abstract α‐Sn provides an ideal avenue to investigate novel topological properties owing to
its rich diagram of topological phases and simple elemental material structure. Thus far …

Large Damping Enhancement in Dirac‐Semimetal–Ferromagnetic‐Metal Layered Structures Caused by Topological Surface States

J Ding, C Liu, Y Zhang, V Kalappattil… - Advanced Functional …, 2021 - Wiley Online Library
This article reports damping enhancement in a ferromagnetic NiFe thin film due to an
adjacent α‐Sn thin film. Ferromagnetic resonance studies show that an α‐Sn film separated …

Switching of a Magnet by Spin‐Orbit Torque from a Topological Dirac Semimetal

J Ding, C Liu, V Kalappattil, Y Zhang… - Advanced …, 2021 - Wiley Online Library
Recent experiments show that topological surface states (TSS) in topological insulators (TI)
can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should …

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

MJA Jardine, D Dardzinski, M Yu… - … Applied Materials & …, 2023 - ACS Publications
Majorana zero modes, with prospective applications in topological quantum computing, are
expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb …

Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration

S Liu, AC Covian, JA Gardener, A Akey… - Communications …, 2022 - nature.com
Abstract α-Sn and SnGe alloys are attracting attention as a new family of topological
quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘ C …

Phase‐Pure α‐Sn Quantum Material on Si Seeded by a 2 nm‐Thick Ge Layer

S Liu, S Li, JA Gardener, A Akey, X Gao… - Small …, 2024 - Wiley Online Library
Abstract α‐Sn, a new elemental topological quantum material, has drawn substantial
attention lately. Unique transport properties and intriguing spintronics applications of α‐Sn …

Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn (001) thin films on InSb (001)

KHM Chen, KY Lin, SW Lien, SW Huang, CK Cheng… - Physical Review B, 2022 - APS
Topological materials, possessing spin-momentum locked topological surface states (TSS),
have attracted much interest due to their potential applications in spintronics. α-phase Sn (α …