Fourier transform infrared spectroscopy and scanning tunneling spectroscopy of porous silicon in the presence of methanol
Porous silicon samples were obtained from p+-and n-type silicon wafers. Gas sensing
measurements showed that the electrical conductivity of porous Si on p+-and n-type wafers …
measurements showed that the electrical conductivity of porous Si on p+-and n-type wafers …
Tunnelling spectroscopy of Pt nanoparticles supported on TiO2 (1 1 0) surface
J Szöko, A Berko - Vacuum, 2003 - Elsevier
Pt nanoparticles fabricated by metal vapour deposition were studied on TiO2 (110) support
as a function of their sizes by scanning tunnelling microscopy and spectroscopy (STM, STS) …
as a function of their sizes by scanning tunnelling microscopy and spectroscopy (STM, STS) …
Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands
F Xie, P Von Blanckenhagen, J Wu, JW Liu… - Applied surface …, 2001 - Elsevier
The long-term contamination and carbonization of Si (111) surfaces in ultrahigh vacuum
(UHV) was investigated by high-resolution electron-energy loss spectroscopy (HREELS) …
(UHV) was investigated by high-resolution electron-energy loss spectroscopy (HREELS) …
Time-dependent oscillations of tunneling current on partially oxidized Si (111) surfaces
F Xie, P von Blanckenhagen - Applied Physics A, 2001 - Springer
Clean and partially oxidized Si (111) surfaces were investigated by scanning tunneling
microscopy and spectroscopy (STM/STS). In contrast to STS spectra measured on clean Si …
microscopy and spectroscopy (STM/STS). In contrast to STS spectra measured on clean Si …
[图书][B] Grafted organic monolayer for single electron transport and for quantum dots solar cells
LM Caillard - 2014 - search.proquest.com
Functionalization of oxide-free silicon and silicon oxide surfaces is important for a number of
applications. In this work, organic monolayers are grafted (GOM) on oxide-free silicon …
applications. In this work, organic monolayers are grafted (GOM) on oxide-free silicon …
Квантовые биения туннельной проводимости наноконтактов
ФИ Далидчик, СИ Кубарев, ОА Пономарёв - Химическая физика, 2009 - elibrary.ru
Построена теория биений электронной плотности в бикомплексе электронных
ловушек с сильным электронно-фононным взаимодействием. Получены …
ловушек с сильным электронно-фононным взаимодействием. Получены …
Quantum beats of nanocontact tunnel conductivity
FI Dalidchik, SI Kubarev, OA Ponomarev - Russian Journal of Physical …, 2009 - Springer
A theory of electron density beats in a bicomplex of electron traps with strong electron-
phonon interaction was constructed. Analytic equations for the influence of temperature on …
phonon interaction was constructed. Analytic equations for the influence of temperature on …
[PDF][PDF] FOURIER ANALYSIS OF TEMPORAL AND SPATIAL OSCILLATIONS OF TUNNELING CURRENT IN SCANNING TUNNELING MICROSCOPY
SOOFT CURRENT - Chinese Physics, 1963 - researchgate.net
Partially oxidized Si (111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG)
were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) …
were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) …