Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth
D Ielmini - IEEE Transactions on Electron Devices, 2011 - ieeexplore.ieee.org
Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture
Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory
is observed using a Ag| TiOx| F‐doped‐SnO2 memory cell at room temperature. Unlike other …
is observed using a Ag| TiOx| F‐doped‐SnO2 memory cell at room temperature. Unlike other …
Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
X Zhang, L Xu, H Zhang, J Liu, D Tan, L Chen… - Nanoscale Research …, 2020 - Springer
The AlO x-based resistive switching memory device is fabricated by an oxidation diffusion
process that involves depositing an Al film on an ITO substrate and annealing at 400° C in a …
process that involves depositing an Al film on an ITO substrate and annealing at 400° C in a …
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
J Park, H Ryu, S Kim - Scientific Reports, 2021 - nature.com
Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for
synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to …
synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to …
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-
switching memory devices. We show a universal dependence of set-state resistance and …
switching memory devices. We show a universal dependence of set-state resistance and …
[HTML][HTML] Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions
Photo-induced novel effect in a material with multiple physical properties has highly
important potential applications in the photo-electric multifunctional electronic devices. In …
important potential applications in the photo-electric multifunctional electronic devices. In …
Overwhelming coexistence of negative differential resistance effect and RRAM
An electronic cell that possesses synchronously multi-physical properties is of great
importance in the applications of multifunctional electronic devices. In this study, an …
importance in the applications of multifunctional electronic devices. In this study, an …
The DNA strand assisted conductive filament mechanism for improved resistive switching memory
B Sun, L Wei, H Li, X Jia, J Wu, P Chen - Journal of Materials Chemistry …, 2015 - pubs.rsc.org
Over the next few years, it is expected that resistive random access memory (RRAM) will be
developed as promising non-volatile memory owing to its advantages of simple structure …
developed as promising non-volatile memory owing to its advantages of simple structure …
Transient Resistive Switching Memory of CsPbBr3 Thin Films
Q Lin, W Hu, Z Zang, M Zhou, J Du… - Advanced Electronic …, 2018 - Wiley Online Library
Recently, transient electronic devices play an indispensable role in modern disposable
electronics and create potential application fields that cannot be addressed with …
electronics and create potential application fields that cannot be addressed with …