Memory devices and applications for in-memory computing
Traditional von Neumann computing systems involve separate processing and memory
units. However, data movement is costly in terms of time and energy and this problem is …
units. However, data movement is costly in terms of time and energy and this problem is …
In-memory computing with resistive switching devices
Modern computers are based on the von Neumann architecture in which computation and
storage are physically separated: data are fetched from the memory unit, shuttled to the …
storage are physically separated: data are fetched from the memory unit, shuttled to the …
Neuromorphic computing with multi-memristive synapses
Neuromorphic computing has emerged as a promising avenue towards building the next
generation of intelligent computing systems. It has been proposed that memristive devices …
generation of intelligent computing systems. It has been proposed that memristive devices …
Perovskite oxides as active materials in novel alternatives to well-known technologies: A review
Modern society is faced with an important challenge–how to ensure enough energy and
resources for industrial and population growth and preserve the environment at the same …
resources for industrial and population growth and preserve the environment at the same …
In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling
Resistive memory technologies could be used to create intelligent systems that learn locally
at the edge. However, current approaches typically use learning algorithms that cannot be …
at the edge. However, current approaches typically use learning algorithms that cannot be …
Challenges and applications of emerging nonvolatile memory devices
W Banerjee - Electronics, 2020 - mdpi.com
Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …
applications beyond the scope of silicon-based complementary metal oxide semiconductors …
Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells
The large photocurrent hysteresis observed in many organometal trihalide perovskite solar
cells has become a major hindrance impairing the ultimate performance and stability of …
cells has become a major hindrance impairing the ultimate performance and stability of …
ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …