Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …

This letter studies the impact of multi-domain dynamics on the memory window (MW) of a
Ferroelectric FET (FeFET). The memory window primarily depends on the density of …

We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …

In this paper, the effect of oxide-semiconductor interface trapped charges on the
performance of 22-nm Fully Depleted Silicon on Insulator (FDSOI) Negative Capacitance …

Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture.
These multidomains in the ferroelectric (FE) cause the 2-D gradients in local polarization …

We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric
tunnel junction (FTJ) in part-I of this work. Here, we have used the 2-D potential functions …

Recent research on CMOS-compatible FETs aims at aggressive scaling, targeting advanced
performance nodes (7 nm-14 nm), with the ultimate scalability limit posed by direct source-to …

This article presents a comprehensive 2-D analytical model for magnetic tunnel junctions
(MTJs), encompassing the multidomain effect. Utilizing Green's function approach, it derives …

This paper presents estimation and analysis of the higher order harmonics, power features,
and real performance of flip-flop and master-slave latch topologies. This research article …

The ferroelectric layer thickness in the CMOS-compatible FETs must be scaled down to the
nm dimension. At such thicknesses, direct gate tunneling becomes a prominent …