ABSTRACT PCMs are Non-Volatile Memories (NVMs) that store data using phase-change
semiconductors, such as silicon-chalcogenide glass. In addition to increased integration …

The structural features and electrical properties of thin materials developed for phase
change memory (PCRAM 1) are highly influenced by the stoichiometry and the binding …

The material engineering of GeSbTe alloys has led to the significant improvements of
thermal stability, necessary to ensure the data retention of the Phase-Change Memory …

Abstract Unlike Dynamic Random Access Memory (DRAM), Phase Change Memory (PCM)
offers higher density, longer data retention, and improved scalability because of its non …

Abstract “Total-IBA” implies the synergistic use of multiple IBA techniques. It has been
claimed that Total–IBA inherits the accuracy of the most accurate IBA technique used. A …

We have investigated the in situ doping of GeSn with Ge 2 H 6, SnCl 4, B 2 H 6 (p-type) or
PH 3 (n-type) at 349 C, 100 Torr on Ge Strain-relaxed Buffers, themselves on Si (001) …

Abstract The self-consistent Ion Beam Analysis (IBA) of cultural heritage samples using the
external beam is technically demanding. We report on the calibration of an analysis of glass …

Nitrogen doping in chalcogenide materials represents a promising way for the improvement
of material properties. Indeed, N doping in GeSbTe phase-change alloys have …

The combination of X‐ray reflectivity (XRR) and grazing incidence X‐ray fluorescence
(GIXRF) is a surface sensitive analytical method, which can be used for the characterization …

AlN thin films have been deposited on silicon substrate by vacuum arc discharge technique
at different substrate temperatures. The information regarding depth profiling of AlN thin films …