ZnO as a functional material, a review
MA Borysiewicz - Crystals, 2019 - mdpi.com
Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many
properties that make it widely studied in the material science, physics, chemistry …
properties that make it widely studied in the material science, physics, chemistry …
ZnO thin films and light-emitting diodes
ZnO is attracting considerable attention for its possible application to light-emitting sources
due to its advantages over GaN. We review the recent progress in the growth of ZnO …
due to its advantages over GaN. We review the recent progress in the growth of ZnO …
Soft solution route to directionally grown ZnO nanorod arrays on Si wafer; room‐temperature ultraviolet laser
A high‐quality ZnO nanorod array (NRA) has been successfully grown on a Si wafer by a
wet‐chemical process, where the Si wafer was dip‐coated with 4 nm sized ZnO …
wet‐chemical process, where the Si wafer was dip‐coated with 4 nm sized ZnO …
ZnO nanobelts grown on Si substrate
YB Li, Y Bando, T Sato, K Kurashima - Applied Physics Letters, 2002 - pubs.aip.org
Using infrared irradiation to heat an industrial brass Cu–Zn alloy disk in moderate vacuum,
ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal …
ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal …
Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires
M Kolhep, F Pantle, M Karlinger, D Wang, T Scherer… - Nano Letters, 2023 - ACS Publications
We demonstrate the epitaxial coating of GaN NWs with an epitaxial ZnO shell by atomic
layer deposition at 300° C. Scanning transmission electron microscopy proves a sharp and …
layer deposition at 300° C. Scanning transmission electron microscopy proves a sharp and …
A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C
JH Kim, EM Kim, D Andeen, D Thomson… - Advanced Functional …, 2007 - Wiley Online Library
Heteroepitaxial ZnO films are successfully grown on nondoped GaN‐buffered Al2O3 (0001)
substrates in water at 90° C using a two‐step process. In the first step, a discontinuous ZnO …
substrates in water at 90° C using a two‐step process. In the first step, a discontinuous ZnO …
Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering
A series of ZnO films were deposited on c-plane sapphire substrates having different buffer
layer thicknesses between 50 and 500Å by radio-frequency (rf) magnetron sputtering …
layer thicknesses between 50 and 500Å by radio-frequency (rf) magnetron sputtering …
Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer
Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated
in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality …
in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality …
[图书][B] Transparent semiconducting oxides: bulk crystal growth and fundamental properties
Z Galazka - 2020 - taylorfrancis.com
This book discusses various aspects of different bulk TSO single crystals in terms of
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …