Electrothermal Modeling of Multi-Nanosheet FETs With Various Layouts

W Kwon, C Yoo, J Jeon - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
In this study, we propose a highly accurate and rapidly analyzable electrothermal modeling
for the observed self-heating effect (SHE) characteristics in multinanosheet FETs (mNS …

Improvement of Thermal Characteristics and On-current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering

YS Song, H Kim, JH Kim - IEEE Access, 2024 - ieeexplore.ieee.org
For improving thermal characteristics and on-current () in vertically stacked nanosheet field-
effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …

Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FET

S Rathore, N Bagga, S Dasgupta - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
Sheet/channel wrapping by the low-thermal conductive material, sheet stacking, dielectric
wall (DW) for N/P separation, etc., puts a few vital reliability concerns in stacked Forksheet …

Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack

N Gandhi, S Rathore, RK Jaisawal… - … on Simulation of …, 2024 - ieeexplore.ieee.org
This paper reveals the role of Flicker (1/f) Noise and process variations (ie, random dopant
fluctuation, RDF) on the sensitivity of the Junctionless FinFET-based hydrogen gas (H2) …

Unveiling the Role of Interface and Dielectric Wall Traps with Self-heating Induced Aging Prediction of Forksheet FET

S Rathore, S Kumar, M Shakir, N Bagga… - 2024 8th IEEE …, 2024 - ieeexplore.ieee.org
Evaluating different variability merits is a crucial research step to look after the reliability and
aging of the device. Generally, the self-healing effect (SHE) is a prime factor in scaled …

Design of Low-Power Operation with Sub 7-nm Semiconductor Technology Node

SB Rahi - Handbook of Emerging Materials for Semiconductor …, 2024 - Springer
This chapter focuses on the design aspects and challenges associated with achieving low-
power operation in sub 7-nanometer (nm) semiconductor technology nodes. As technology …