This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Ballistic electron transport is a key requirement for existence of a topological phase
transition in proximitized InSb nanowires. However, measurements of quantized …

Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs),
an observation that is commonly attributed to the presence of surface states and their …

III-V semiconductor nanowires have attracted intensive research interest because of their
promising optical and electronic properties that can be manipulated by tailoring nanowire …

We report the growth of InAs1–x Sb x nanowires (0≤ x≤ 0.15) grown by catalyst-free
molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of …

III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …

We present a study of electron gas properties in InAs nanowires determined by interaction
between nanowire geometry, doping and surface states. The electron gas density and space …

In this work, we present a study of the surface roughness dependent electron mobility in InAs
nanowires grown by the nickel-catalyzed chemical vapor deposition method. These …

The electrical and structural properties of⟨ 111⟩ B-oriented InAs nanowires grown using
metal–organic precursors have been studied. On the basis of electrical measurements it was …