Laser ionization time of flight mass spectrometer for isotope mass detection and elemental analysis of materials
In this paper we present the construction and modification of a linear time-of-flight mass
spectrometer to improve its mass resolution. This system consists of a laser …
spectrometer to improve its mass resolution. This system consists of a laser …
(111)-oriented Zn3N2 growth on a-plane sapphire substrates by molecular beam epitaxy
T Oshima, S Fujita - Japanese journal of applied physics, 2006 - iopscience.iop.org
oriented Zn 3 N 2 thin films were grown on a-plane (1120) sapphire substrates by plasma-
assisted molecular beam epitaxy. Zn 3 N 2/sapphire exhibits orientational relationships of …
assisted molecular beam epitaxy. Zn 3 N 2/sapphire exhibits orientational relationships of …
Croissance catalysée de nanofils de ZnSe avec boîtes quantiques de CdSe
M Elouneg-Jamroz - 2013 - theses.hal.science
Des nanofils de ZnSe catalysés avec de l'or ont été synthétisés pour la première fois sur
pseudo-substrats de ZnSe déposé sur GaAs. La nucléation de l'or a été étuidiée en détails …
pseudo-substrats de ZnSe déposé sur GaAs. La nucléation de l'or a été étuidiée en détails …
Bi2Se3 van der Waals Virtual Substrates for II–VI Heterostructures
TA Garcia, V Deligiannakis, C Forrester… - … status solidi (b), 2017 - Wiley Online Library
We report on the growth and characterization of optical quality multiple quantum well
structures of ZnxCd1− xSe/ZnxCdyMg1− x− ySe on an ultra‐thin Bi2Se3/CdTe virtual …
structures of ZnxCd1− xSe/ZnxCdyMg1− x− ySe on an ultra‐thin Bi2Se3/CdTe virtual …
[PDF][PDF] Miryam ELOUNEG-JAMROZ
CCN de ZnSe - 2013 - Citeseer
We know that the subject of nanowire growth has been studied since Wagner and Ellis
famously presented their gold catalysed Si whiskers in 1964 [1] and presented their vapour …
famously presented their gold catalysed Si whiskers in 1964 [1] and presented their vapour …
Comparison studies on growth modes of MBE grown ZnSe on GaAs [111] A and GaAs [111] B, using RHEED
FS Gard, JD Riley, R Leckey… - … on Optoelectronic and …, 2000 - ieeexplore.ieee.org
In the last three decades, research into wide bandgap II-VI semiconductors was mainly
concentrated on the growth and characterisation of ZnSe based structures on GaAs [001] …
concentrated on the growth and characterisation of ZnSe based structures on GaAs [001] …