Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs
This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
Changes and challenges of photovoltaic inverter with silicon carbide device
High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
Enablers for overcurrent capability of silicon-carbide-based power converters: An overview
With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …
Short-circuit protection circuits for silicon-carbide power transistors
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
Effect of asymmetric layout and unequal junction temperature on current sharing of paralleled SiC MOSFETs with kelvin-source connection
C Zhao, L Wang, F Zhang - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …
Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
of the power conversion systems. However, due to mismatched circuit parameters or …
A novel DBC layout for current imbalance mitigation in SiC MOSFET multichip power modules
This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …
A Dynamic Current Balancing Method for Paralleled SiC MOSFETs Using Monolithic Si-RC Snubber Based on a Dynamic Current Sharing Model
J Lv, C Chen, B Liu, Y Yan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …
losses and reduce current capacity. The existing current balancing methods will make the …
PowerSynth: A power module layout generation tool
PowerSynth is a multiobjective optimization tool for rapid design and verification of power
semiconductor modules. By using reduced order models for the calculation of electrical …
semiconductor modules. By using reduced order models for the calculation of electrical …
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS
J Hu, O Alatise, JAO Gonzalez… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
Differences in the thermal and electrical switching time constants between parallel-
connected devices cause imbalances in the power and temperature distribution, thereby …
connected devices cause imbalances in the power and temperature distribution, thereby …