Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs

H Li, S Munk-Nielsen, X Wang… - … on Power Electronics, 2015 - ieeexplore.ieee.org
This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …

Changes and challenges of photovoltaic inverter with silicon carbide device

Z Zeng, W Shao, H Chen, B Hu, W Chen, H Li… - … and Sustainable Energy …, 2017 - Elsevier
High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …

Enablers for overcurrent capability of silicon-carbide-based power converters: An overview

S Bhadoria, F Dijkhuizen, R Raj, X Wang… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …

Short-circuit protection circuits for silicon-carbide power transistors

DP Sadik, J Colmenares, G Tolstoy… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …

Effect of asymmetric layout and unequal junction temperature on current sharing of paralleled SiC MOSFETs with kelvin-source connection

C Zhao, L Wang, F Zhang - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions

H Li, S Zhao, X Wang, L Ding… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

A novel DBC layout for current imbalance mitigation in SiC MOSFET multichip power modules

H Li, S Munk-Nielsen, S Bȩczkowski… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …

A Dynamic Current Balancing Method for Paralleled SiC MOSFETs Using Monolithic Si-RC Snubber Based on a Dynamic Current Sharing Model

J Lv, C Chen, B Liu, Y Yan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …

PowerSynth: A power module layout generation tool

TM Evans, Q Le, S Mukherjee, I Al Razi… - … on Power Electronics, 2018 - ieeexplore.ieee.org
PowerSynth is a multiobjective optimization tool for rapid design and verification of power
semiconductor modules. By using reduced order models for the calculation of electrical …

Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS

J Hu, O Alatise, JAO Gonzalez… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
Differences in the thermal and electrical switching time constants between parallel-
connected devices cause imbalances in the power and temperature distribution, thereby …