The aim of this paper is to provide an extensive overview about the state-of-art commercially
available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed …

Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …

The reduction of the trap density at the SiC/SiO 2 interface of a SiC metal-oxide-
semiconductor field-effect transistor (MOSFET) is still an open issue for development of the …

This paper proposes the detailed analysis of the short-circuit failure mechanism of a
particular class of silicon carbide (SiC) power MOSFETs, exhibiting a safe fail-to-open-circuit …

This paper studies the spread of key electrical parameters of Silicon Carbide (SiC) MOSFET
devices and its effect on the short-circuit (SC) behaviors. Device screening strategies are …

While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely
encountered in the scientific literature, there is not so much research dealing with the …

The proposed dual-port gate driver architecture relies on a quasi-flying gate concept to
protect SiC power mosfet s against short-circuit events. Hard switching faults (HSFs) extract …

This paper provides an insight into the operational robustness of commercially available SiC
MOSFET power modules, during short-circuit (SC) and unclamped inductive switching (UIS) …

Reliability represents a very important factor for the design of Silicon Carbide (SiC) power
metal oxide semiconductor field effect transistors (MOSFETs). Ruggedness of the device …

In this paper, the degradation mechanism of silicon carbide (SiC) power metal-oxide-
semiconductor field-effect transistors (MOSFETs) under long-term short-circuit (SC) stress is …