After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

We have benchmarked germane and digermane for the low temperature growth of intrinsic
and heavily in-situ borondoped SiGe (with disilane as the Si gaseous precursor). At 500 C …

Abstract Low temperature Si and SiGe epitaxy have been crucial in the semiconductor
industry, prompting interest in high-order silanes as Si precursors. In this study, we …

The growth of intrinsic SiGe and, n-and p-type doping of Si and SiGe layers was studied
using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool …

By designing oxidation-reduction reaction, epitaxial growth of silicon-germanium (Si 1− x Ge
x: 0≤ x≤ 1) films on Si (001) at low temperature has been achieved using reactive thermal …

We have investigated the structural and electrical properties of n-type doped Si 1− x Ge x
epitaxial layers (x= 24–26%) grown by chemical vapor deposition with conventional [SiH 2 …

Cette thèse s' inscrit dans le cadre du développement d'un combustible nucléaire faiblement
enrichi pour les réacteurs de recherche, constitué de particules d'uranium-molybdène …

This study presents signal-to-noise ratio (SNR) measurements of single crystalline dots or
layers of SiGe/Si in multilayer structures in terms of Ge content, interfacial and layer quality …

The conventional 2D geometrical scaling of transistors is now facing many challenges in
order to continue the performance enhancement while decreasing power consumption. The …

Modélisation des aérosols marins et de leur impact radiatif direct sur le bassin méditerranéen
dans le cadre du projet CHARM Page 1 En vue de l'obtention du DOCTORAT DE …