This review introduces hydrogen depth profiling by nuclear reaction analysis (NRA) via the
resonant 1 H (15 N, αγ) 12 C reaction as a versatile method for the highly depth-resolved …

The present report deals with the main aspects of the interaction of hydrogen with the
atomically clean crystalline silicon surfaces and submonolayer metal/silicon interfaces. After …

Back contact silicon solar cells, valued for their aesthetic appeal by removing grid lines on
the sunny side, find applications in buildings, vehicles and aircrafts, enabling self-power …

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

The quest to build a quantum computer has been inspired by the recognition of the
formidable computational power such a device could offer. In particular silicon-based …

This paper reviews recent progress in understanding microstructural and growth-
mechanistic aspects of ultrathin (< 4 nm) oxynitride films for gate dielectric applications …

The surface morphology of Ge (001) films grown by molecular beam epitaxy on a Ge (001)
substrate is measured using scanning tunneling microscopy. Growth mounds are observed …

A transport and epitaxy model to describe silicon epitaxial film growth in a SiHCl3 H2
system under atmospheric pressure is developed by numerical calculations and comparison …

We present a computationally efficient classical many-body potential that is capable of
predicting the energetics of bulk silicon, silicon surfaces, and the interaction of hydrogen …

Progress in the fields of electronic and optical devices relies on the ability of the
semiconductor industry to fabricate components of ever-increasing complexity and …