On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

K Toprasertpong, M Takenaka, S Takagi - Applied Physics A, 2022 - Springer
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …

Towards efficient in-memory computing hardware for quantized neural networks: state-of-the-art, open challenges and perspectives

O Krestinskaya, L Zhang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The amount of data processed in the cloud, the development of Internet-of-Things (IoT)
applications, and growing data privacy concerns force the transition from cloud-based to …

Reservoir computing on a silicon platform with a ferroelectric field-effect transistor

K Toprasertpong, E Nako, Z Wang, R Nakane… - Communications …, 2022 - nature.com
Reservoir computing offers efficient processing of time-series data with exceptionally low
training cost for real-time computing in edge devices where energy and hardware resources …

Comprehending in-memory computing trends via proper benchmarking

NR Shanbhag, SK Roy - 2022 IEEE Custom Integrated Circuits …, 2022 - ieeexplore.ieee.org
Since its inception in 2014 [1], the modern version of in-memory computing (IMC) has
become an active area of research in integrated circuit design globally for realizing artificial …

Benchmarking in-memory computing architectures

NR Shanbhag, SK Roy - IEEE Open Journal of the Solid-State …, 2022 - ieeexplore.ieee.org
In-memory computing (IMC) architectures have emerged as a compelling platform to
implement energy-efficient machine learning (ML) systems. However, today, the energy …

Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors

G Kim, DH Ko, T Kim, S Lee, M Jung… - … Applied Materials & …, 2022 - ACS Publications
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-
power and high-density nonvolatile memory devices in processing-in-memory (PIM) …

In-memory computing for machine learning and deep learning

N Lepri, A Glukhov, L Cattaneo… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …

Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress

K Toprasertpong, M Takenaka, S Takagi - Frontiers in Electronics, 2022 - frontiersin.org
Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric
devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the …

Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory

K Toprasertpong, C Matsui, M Takenaka… - Journal of Physics D …, 2023 - iopscience.iop.org
Memory arrays and computing-in-memory architecture based on emerging nonvolatile
memory devices with a current-sensing scheme face several challenges when implemented …

Low-power vertically stacked one time programmable multibit IGZO-based BEOL compatible ferroelectric TFT memory devices with lifelong retention for monolithic 3D …

S De, S Thunder, D Lehninger, MPM Jank… - Embedded Artificial …, 2023 - taylorfrancis.com
This article demonstrates indium gallium zinc oxide-based onetime programmable
ferroelectric memory devices with multilevel coding and lifelong retention capability. The …