In a method of manufacturing a semiconductor device, a first contact hole is formed in one or
more dielectric layers disposed over a source/drain region or a gate electrode. An adhesive …

A semiconductor device includes an active region over a substrate; a first cobalt-containing
feature disposed over the active region; a conductive cap disposed over and in physical …

BACKGROUND The present invention relates to semiconductor devices, and more
specifically, to three-dimensional (3D) semicon ductor devices. Field effect transistors (FETs) …

Methods and apparatus to form fully self-aligned vias are described. First conductive lines
are recessed in a first insulating layer on a substrate. A first metal film is formed in the …

Apparatuses and methods to provide a fully self-aligned via are described. Some
embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to …

2 () 16/()() 56 () 74 A 1 2/2 () 16 Ng 7.541. 297 B2 6/2009 Mallick et al. 2 () 16/00561 () 4 A 1
2/20 16 Bouche et al. 7985977 B2 7/2011 Gogoi et al. 2 () 16/()() 687 1 () A 1 3/2 () 16 VV …

(57) ABSTRACT A method for forming a conductive structure for a semicon ductor device
includes depositing a barrier layer in a trench formed in a dielectric material and forming an …

Apparatuses and methods to provide a fully self-aligned via are described. Some
embodiments of the disclosure provide an electronic device having a bridging via between a …

A semiconductor device and a method of fabricating a contact to interface with an
interconnect in a semiconductor device are described. The device includes a dielectric layer …

Interconnect structures and corresponding techniques for forming the interconnect structures
are disclosed herein. An exemplary interconnect structure includes a conductive feature that …