Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
MoS2 has received a lot of attention lately as a semiconducting channel material for
electronic devices, in part due to its large band gap as compared to that of other 2D …
electronic devices, in part due to its large band gap as compared to that of other 2D …
Physics-based modelling of MoS2: the layered structure concept
Recently, continuum-based technology computer aided design (TCAD) device models have
been used to investigate the advantages and limitations of transition metal dichalcogenides …
been used to investigate the advantages and limitations of transition metal dichalcogenides …
Field-Effect Transistors Based on 2D Materials: A Modeling Perspective
In 1965, Gordon Moore, one of Intel's co-founders, formulated in Moore (2006) the now
famous law that states that the number of transistors per integrated circuit (IC) doubles every …
famous law that states that the number of transistors per integrated circuit (IC) doubles every …
Transistors à effet de champ
En 1965, Gordon Moore, l'un des cofondateurs d'Intel, a formulé dans (Moore 2006) la
désormais célèbre loi selon laquelle le nombre de transistors par circuit intégré (CI) double …
désormais célèbre loi selon laquelle le nombre de transistors par circuit intégré (CI) double …