Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu… - ACS …, 2018 - ACS Publications
MoS2 has received a lot of attention lately as a semiconducting channel material for
electronic devices, in part due to its large band gap as compared to that of other 2D …

Physics-based modelling of MoS2: the layered structure concept

G Mirabelli, PK Hurley, R Duffy - Semiconductor Science and …, 2019 - iopscience.iop.org
Recently, continuum-based technology computer aided design (TCAD) device models have
been used to investigate the advantages and limitations of transition metal dichalcogenides …

Field-Effect Transistors Based on 2D Materials: A Modeling Perspective

M Luisier, C Klinkert, S Fiore, J Backman… - … -CMOS: State of the …, 2023 - books.google.com
In 1965, Gordon Moore, one of Intel's co-founders, formulated in Moore (2006) the now
famous law that states that the number of transistors per integrated circuit (IC) doubles every …

Transistors à effet de champ

M LUISIER, C KLINKERT, S FIORE… - Au-delà du …, 2024 - books.google.com
En 1965, Gordon Moore, l'un des cofondateurs d'Intel, a formulé dans (Moore 2006) la
désormais célèbre loi selon laquelle le nombre de transistors par circuit intégré (CI) double …