Quasi-fermi-based charge transport scheme for device simulation in cryogenic, wide bandgap, and high-voltage applications
Z Stanojević, JM González-Medina… - … on Electron Devices, 2022 - ieeexplore.ieee.org
We present a novel approach to solving the transport problem in semiconductors. We
reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as …
reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as …
[图书][B] Novel Approach to TCAD Strain Simulation
T Weingartner - 2023 - search.proquest.com
The physics of strained semiconductors is a broad but well-understood topic. However,
current Technology Computer-Aided Design (TCAD) models do not reflect the underlying …
current Technology Computer-Aided Design (TCAD) models do not reflect the underlying …