Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

We report fast charge-state readout of a double quantum dot in a CMOS split-gate silicon
nanowire transistor via the large dispersive interaction with microwave photons in a lumped …

Silicon spin qubits are among the most promising candidates for large scale quantum
computers, due to their excellent coherence and compatibility with CMOS technology for …

The advanced nanoscale integration available in CMOS technology provides a key
motivation for its use in spin-based quantum computing applications. Initial demonstrations …

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide
semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk …

We propose a structure with word/bit line control for a two-dimensional quantum dot array,
which allows random access for arbitrary quantum dots with a small number of control …

In this work, we demonstrate the use of a bulk FinFET designed in a 12-nm CMOS
technology node, as a quantum dot (QD)-based thermometer at cryogenic temperatures …

A compact analytical model is proposed along with a parameter extraction methodology to
accurately capture the steady-state (DC) sequential tunneling current observed in the …

Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be
accurately located in close proximity to and independently addressable by external …

Based on MOSFETs with four different gate stacks, we extract the oxide trap density and
transconductance from the low frequency noise and DC transfer characteristics at room …