III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Ferroelectric scandium aluminum nitride (ScAlN), owing to its unique properties and
seamless integration with the mainstream GaN technology, has attracted considerable …

Screw dislocations are generally considered to be one of the main causes of GaN-based
device leakage, but so far, nearly no reports have focused on the effects of open-core screw …

UV-C LEDs have great application prospects in the fields of sterilization, disinfection, and
non-line-of-sight solar-blind communication. However, their efficiency is currently not high …

In this work, ultrawide bandgap ɛ-Ga 2 O 3/h-BCN heterojunctions were epitaxially grown
on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). This …

GaN-on-diamond wafers are investigated to overcome the heat accumulation issues in GaN-
based electronic devices. Until now, growing the high-quality GaN film on the diamond for …

Large wafer-level hexagonal boron nitride (h-BN) was grown on sapphire by MOCVD in a
pulse epitaxy mode. Comprehensive materials characterizations were performed on these …

The GaN films are grown on 4° miscut to (1 1 0) and (1 0 0) orientation (1 1 1) diamond
substrates by metal organic chemical vapor deposition respectively. The ordinary (1 1 1) …