A review of switching oscillations of wide bandgap semiconductor devices
J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …
high power density to power converters due to their excellent performance. However, their …
Parasitic capacitance Eqoss loss mechanism, calculation, and measurement in hard-switching for GaN HEMTs
R Hou, J Lu, D Chen - 2018 IEEE Applied Power Electronics …, 2018 - ieeexplore.ieee.org
Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can
achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular …
achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular …
Review of loss distribution, analysis, and measurement techniques for GaN HEMTs
J Gareau, R Hou, A Emadi - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
In recent years, there has been a trend for improved performance in semiconductor
switches, allowing power electronic systems to achieve higher efficiency and higher power …
switches, allowing power electronic systems to achieve higher efficiency and higher power …
A high-bandwidth integrated current measurement for detecting switching current of fast GaN devices
Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their
excellent switching performance. To maximize the performance of GaN devices, it is …
excellent switching performance. To maximize the performance of GaN devices, it is …
A universal SPICE field-effect transistor model applied on SiC and GaN transistors
A Endruschat, C Novak, H Gerstner… - … on Power Electronics, 2018 - ieeexplore.ieee.org
This paper presents a universal SPICE model for field-effect transistors, which is
independent from technology and semiconductor material. The created behavioral …
independent from technology and semiconductor material. The created behavioral …
Research on losses of PCB parasitic capacitance for GaN-based full bridge converters
W Meng, F Zhang, G Dong, J Wu… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The utilization of wide band-gap semiconductor devices provides the possibility of higher
switching frequency and power density for power converters. However, the influence of …
switching frequency and power density for power converters. However, the influence of …
Time-and frequency-domain characterization of switching losses in GaN FETs power converters
This article presents a methodology for the time-frequency characterization of switching
losses in Gallium nitride field effect transistors used in power electronics applications …
losses in Gallium nitride field effect transistors used in power electronics applications …
Characterization and modeling of frequency-dependent on-resistance for GaN devices at high frequencies
The switching frequencies of the GaN-based power converters have been pushed to several
megahertz and even higher. At such high frequencies, the on-resistances of the GaN …
megahertz and even higher. At such high frequencies, the on-resistances of the GaN …
Performance comparison of cascode GaN HEMT and Si MOSFET based inverter for motor drive applications
J Lautner, B Piepenbreier - 2017 IEEE 12th International …, 2017 - ieeexplore.ieee.org
This paper presents a performance comparison of a cascode GaN HEMT and a Si MOSFET
rated at 600 V which are used in a 1 kW three-phase inverter. The advantages and …
rated at 600 V which are used in a 1 kW three-phase inverter. The advantages and …
A highly integrated GaN power module with low parasitic inductance and high thermal performance
This paper presents a highly integrated 650V/150A GaN power module with low parasitic
inductance and high thermal performance. The bus decoupling capacitors, drive …
inductance and high thermal performance. The bus decoupling capacitors, drive …