The objective of this review article is to give an overview of the current state-of-the-art of
photoluminescence (PL) spectroscopy as a characterization tool in the study of …

Semiconductor heterojunctions and superlattices have recently shown tremendous potential
for device applications because of their flexibility for tailoring the electronic band structure. A …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

We present a first-principles approach to deriving the relative energies of valence and
conduction bands at semiconductor interfaces, along with a model which permits a simple …

Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

The experimental and theoretical work on carrier dynamics and recombination mechanisms
in semiconductor heterostructures with staggered type II alignments is reviewed. Examples …

Publisher Summary This chapter presents an overview of several theoretical approaches
and experimental measurement techniques for determining band offset values and discuss …

The validity of a recent proposal that transition-metal impurity levels in semiconductors may
serve as a reference in band alignment in semiconductor heterojunctions is positively …

Saturation behavior of intersubband optical transitions in p-type semiconductor quantum
wells is examined theoretically with the multiband effective-mass model. Carrier-phonon …

This paper suggests a simple permutation scheme to construct the Hermitian Hamiltonian
utilized in the effective-mass equation, introduces a smoothed profile to more accurately …