Recent progress on emerging transistor‐based neuromorphic devices

Y He, L Zhu, Y Zhu, C Chen, S Jiang… - Advanced Intelligent …, 2021 - Wiley Online Library
Human brain outperforms the current von Neumann digital computer in many aspects, such
as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic …

[HTML][HTML] Wide bandgap semiconductor-based integrated circuits

S Yuvaraja, V Khandelwal, X Tang, X Li - Chip, 2023 - Elsevier
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

Synergistic modulation of synaptic plasticity in IGZO-based photoelectric neuromorphic TFTs

L Zhu, Y He, C Chen, Y Zhu, Y Shi… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Neuromorphic devices are of great significance for next generation energy-efficient brain-
like computing and perception. Oxide-based photoelectric neuromorphic transistors are very …

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing

L Zhu, Y He, C Chen, X Wang, Y Zhu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We report a high-performance transparent amorphous indium gallium zinc oxide thin-film
transistor (a-IGZO TFT) gated by atomic layer deposition (ALD)-deposited HfAlO x. Through …

Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits

Y Zhang, G He, W Wang, B Yang, C Zhang… - Journal of Materials …, 2020 - Elsevier
In this work, a non-toxic and environmentally friendly aqueous-solution-based method has
been adopted to prepare gadolinium-doped hafnium oxide (HfO 2) gate dielectric thin films …

Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors

XL Wang, HL Zhao, G Tarsoly, H Zhu, JY Lee… - Applied Surface …, 2024 - Elsevier
In 2 O 3 is a transparent semiconductor layer due to its transparency, high mobility, and
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …

Frequency-agile low-temperature solution-processed alumina dielectrics for inorganic and organic electronics enhanced by fluoride doping

X Zhuang, S Patel, C Zhang, B Wang… - Journal of the …, 2020 - ACS Publications
The frequency-dependent capacitance of low-temperature solution-processed metal oxide
(MO) dielectrics typically yields unreliable and unstable thin-film transistor (TFT) …

High-performance solution-processed Ti 3 C 2 T x MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas

T Zhao, C Liu, C Zhao, W Xu, Y Liu… - Journal of Materials …, 2021 - pubs.rsc.org
MXenes are a large class of two-dimensional (2D) materials widely studied recently since
they have good water solubility and are able to tune the work function (WF) of materials …

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In₂O₃ Nanofiber Networks

Y Xia, G He, W Wang, Q Gao… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Electrospinning one-dimensional (1-D) semiconductor nanofibers have been regarded as
one of the most promising building blocks for future nanoelectronics with high performance …

Mesoporous Ultrathin In2O3 Nanosheet Cocatalysts on a Silicon Nanowire Photoanode for Efficient Photoelectrochemical Water Splitting

G Yan, Y Dong, T Wu, S Xing… - ACS Applied Materials & …, 2021 - ACS Publications
Vertical Si nanowire (NW) arrays are a promising photoanode material in the
photoelectrochemical (PEC) water splitting field because of their highly efficient light …