Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer
A Siddique, R Ahmed, J Anderson… - … Applied Materials & …, 2021 - ACS Publications
In situ metal–organic chemical vapor deposition growth of SiN x passivation layers is
reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface damage …
reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface damage …
Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si (111) substrate
Y Xia, Y Zhu, C Liu, H Wei, T Zhang… - Materials Research …, 2020 - iopscience.iop.org
A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic
chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride …
chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride …
Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content
Z Yarar, D Cesur, MD Alyörük, HC Çekil… - … Journal of Modern …, 2022 - World Scientific
The electron mobility at a AlGaN/GaN heterostructure is calculated using an ensemble
Monte Carlo (MC) technique where the emphasis is primarily given to screening effects and …
Monte Carlo (MC) technique where the emphasis is primarily given to screening effects and …
Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility
J Yaita, A Yamada, N Nakamura… - Applied Physics …, 2021 - iopscience.iop.org
In this study, we investigated the effects of the thickness and surface roughness of InAlGaN
barrier layers on the electron mobility of InAlGaN/GaN high-electron-mobility transistors …
barrier layers on the electron mobility of InAlGaN/GaN high-electron-mobility transistors …
A structural analysis of ultrathin barrier (In) AlN/GaN heterostructures for GaN‐based high‐frequency power electronics
Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for
GaN‐based materials as well‐known. GaN‐based materials with very quality are grown the …
GaN‐based materials as well‐known. GaN‐based materials with very quality are grown the …