Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and
large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can …

In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …

The fabrication of a low current bidirectional driven violet p-GaN/n-InN heterojunction light-
emitting diode (LED) by the radio-frequency (RF) magnetron sputtering is reported in this …

Using first-principles calculations combined with a semiempirical van der Waals dispersion
correction, we have investigated structural parameters, mixing enthalpies, and band gaps of …

Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …

Quantitative high resolution transmission electron microscopy studies of intentionally grown
1InN/nGaN short-period superlattices (SLs) were performed. The structures were found to …

Aluminum nitride (AlN) film has a wide range of applications optoelectronic devices. In this
paper, AlN thin films were prepared by magnetron sputtering method, the influence of …

Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …