[HTML][HTML] GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1) Si: Lattice tilt, mosaicity and defects content
Integration of III-V devices with Si-photonics and fabrication of monolithic III-V/Si tandem
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
Control of Ge island coalescence for the formation of nanowires on silicon
SP Ramanandan, JR Sapera, A Morelle… - Nanoscale …, 2024 - pubs.rsc.org
Germanium nanowires could be the building blocks of hole-spin qubit quantum computers.
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …