Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdSxTe/p-CdTe heterostructure
AS Achilov, RR Kabulov, SB Utamuradova… - … Physics Letters B, 2023 - World Scientific
In this work, we study the influence of the temperature on the mechanism of current transfer
in the reverse branch of the current–voltage (I–V) characteristics of n-CdS/p-CdTe …
in the reverse branch of the current–voltage (I–V) characteristics of n-CdS/p-CdTe …
Analysis of structural, morphological and nano-mechanical properties of vacuum evaporated nanoscale CdTe and ZnS films
SK Gaur, Q Murtaza, RS Mishra - Optical Materials, 2024 - Elsevier
The structural, morphological, and nano-mechanical properties of vacuum evaporated
cadmium telluride (CdTe) and Zinc Sulfide (ZnS) films had been studied. The films used for …
cadmium telluride (CdTe) and Zinc Sulfide (ZnS) films had been studied. The films used for …
Formation and characterization of ZnS and CdZnS films using open-air chemical vapor deposition for buffer layers of compound semiconductor solar cells
Y Kurimoto, D Kobayashi, N Asou… - Japanese Journal of …, 2023 - iopscience.iop.org
ZnS and CdZnS (a mixed crystal phase of ZnS and CdS) were formed using the open-air
CVD method. Cadmium diethyldithiocarbamate (C 10 H 20 CdN 2 S 4) and zinc …
CVD method. Cadmium diethyldithiocarbamate (C 10 H 20 CdN 2 S 4) and zinc …
Effect of thickness on structural, electrical, and spectral response properties of thermal evaporated CdTe films
VK Ashith, K Priya, GK Rao - Indian Journal of Physics, 2023 - Springer
The II–VI semiconductor thin films have vast applications in optoelectronics. Cadmium
telluride (CdTe) is one such material, which has proved to be useful in the fabrication of …
telluride (CdTe) is one such material, which has proved to be useful in the fabrication of …
[PDF][PDF] Study and Enhancement of the Optoelectronic Properties of Fe-doped CdS Films Fabricated by the Spin Coating
In this work, the sol-gel spin-coated technique deposited CdFeS thin films with (x= 0 to 0.07)
on glass substrates. The effect of Fe doping on the structural, morphological, optical, and …
on glass substrates. The effect of Fe doping on the structural, morphological, optical, and …
[HTML][HTML] ОСОБЕННОСТИ ЭЛЕКТРОФИЗИЧЕСКИХ СВОЙСТВ ГЕТЕРОПЕРЕХОДОВ N-GAAS-P-(GAAS) 1-X-У (GE2) X (ZNSE) Y
СЗ Зайнабидинов, АЙ Бобоев… - Computational …, 2022 - cyberleninka.ru
Определены оптимальные технологические условия выращивания многокомпонентных
эпитаксиальных пленок твердых растворов (GaAs) 1-x-у (Ge2) x (ZnSe) с заданными …
эпитаксиальных пленок твердых растворов (GaAs) 1-x-у (Ge2) x (ZnSe) с заданными …
[PDF][PDF] The influence of immersion time on the structure and morphology of silar deposited cobalt selenide films
H Soonmin - Science International (Lahore), 2021 - researchgate.net
The successive ionic layer adsorption and reaction deposition technique was employed to
synthesis cobalt selenide thin films onto the soda-lime glass. The influence of immersion …
synthesis cobalt selenide thin films onto the soda-lime glass. The influence of immersion …
Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs) 1-x-у (Ge2) x (ZnSe) y
SZ Zaynabidinov, AY Boboev… - Computational …, 2022 - pediatria.orscience.ru
The optimal technological conditions for growing multicomponent epitaxial films of solid
solutions (GaAs) 1-xy (Ge2) x (ZnSe) y with specified physical properties by liquid-phase …
solutions (GaAs) 1-xy (Ge2) x (ZnSe) y with specified physical properties by liquid-phase …