Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …

We present a quantitative physical model describing degradation of poly-crystalline HfO 2
dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The …

We combine experiments and simulations to investigate leakage current and breakdown
(BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport …

Dielectric breakdown is one of the key failure mechanisms in front-end silicon-based
complementary metal oxide semiconductor (CMOS) technology. With the advent of HfO 2 …

For many decades charge-based memory (eg dynamic random access memory (DRAM),
flash memory, etc.) technologies have been successfully scaled down to achieve higher …

In this paper we present a comprehensive physical model that describes charge transport
and degradation phenomena in high-k stacks. The physical mechanisms are modeled using …

This paper presents a novel physical description of the forming process in HfO 2-based
resistive switching memory devices (RRAM). By taking into consideration a grain boundary …

Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may
cause localized non-random trap generation during the percolation breakdown (BD) …

In this invited paper, we demonstrate how physical analysis techniques that are commonly
used in integrated circuits failure analysis can be applied to detect the failure defects …