Controlled growth of heterostructured nanowires and mechanisms of their formation have
been actively studied during the last decades due to perspectives of their implementation …

Nanowire geometry allows semiconductor heterostructures to be obtained that are not
achievable in planar systems, as in, for example, axial superlattices made of large lattice …

Precise control over the crystal structure of colloidal quantum dots (QDs) is of importance for
not only tailoring the optical/electronic properties of QDs but also synthesizing hetero …

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …

The understanding of pressure-dependent fundamental properties of materials is very
essential, not only for basic scientific knowledge but also for advanced technological …

GaP as one of the III–V semiconductors has an indirect band gap in its natural zinc-blend
(ZB) crystal phase, limiting its applications in optoelectronics. The atomic arrangements of …

In this work we investigate effects of the crystal phase, twinning defects and shell formation
on the work function distribution over the surface of axially heterostructured GaP/GaPAs/GaP …

We study using in situ transmission electron microscopy the birth of GaAs nanowires from
liquid Au–Ga catalysts on amorphous substrates. Lattice-resolved observations of the …

The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new
structure with little available information about its emission properties compared to the most …

Typically, vapour liquid solid (VLS)-grown nanowires via metal–organic vapour phase
epitaxy (MOVPE) use gold as a liquid growth catalyst. However, incorporating gold as an …