Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

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[HTML][HTML] Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure

SJ Kim, S Hwang, JD Kwon, J Yoon, JM Park, Y Lee… - Nanomaterials, 2024 - mdpi.com
The impact of radiation on MoS2-based devices is an important factor in the utilization of two-
dimensional semiconductor-based technology in radiation-sensitive environments. In this …
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