Modern electronic and optoelectronic devices are approaching nanometric dimensions
where microscopic details cannot be treated in an effective way. Atomistic approaches …

We analyze the effect of tensional strain in the electronic structure of graphene. In the
absence of electron-electron interactions, within linear elasticity theory, and a tight-binding …

We have developed a unifying tight-binding Hamiltonian that can account for the electronic
properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets …

As the size of modern electronic and optoelectronic devices is scaling down at a steady
pace, atomistic simulations become necessary for an accurate modelling of their structural …

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band.
Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be …

The conductivity effective masses of electrons and holes in Si are calculated for carrier
temperatures from 1 to 3000 K. The temperature dependence of the electron mass is …

Abstract We present the Tight-Binding Studio (TB Studio) software package that calculates
the different parameters of a tight-binding Hamiltonian from a set of Bloch energy bands …

Recent experiments have discovered multipolar orders in a variety of d-orbital Mott
insulators. Motivated by uncovering the exchange interactions which underlie octupolar …

The band structures of fully hydrogenated Si nanosheets and nanotubes are elucidated by
the use of an empirical tight-binding model. The hydrogenated Si sheet is a semiconductor …

We theoretically study the quantum spin Hall states in an Ammann-Beenker-type octagonal
quasicrystal and a periodic snub-square crystal, both sharing the same basic building …