Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers
We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band
We have investigated the molecular beam epitaxial growth and characterization of nearly
defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting …
defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting …
Lateral‐polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence
Aluminum‐gallium‐nitride alloys (Al x Ga1–x N, 0≤ x≤ 1) can emit light covering the
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
Ultra-high thermal-stable glass phosphor layer for phosphor-converted white light-emitting diodes
CC Tsai, WC Cheng, JK Chang, LY Chen… - Journal of Display …, 2013 - opg.optica.org
A glass phosphor layer with ultra-high thermal stability appropriate for phosphor-converted
white light-emitting diodes (PC-WLEDs) is demonstrated. The results showed PC-WLEDs …
white light-emitting diodes (PC-WLEDs) is demonstrated. The results showed PC-WLEDs …
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
Optically pumped lasing from AlGaN/AlN multiple quantum wells grown on single-crystalline
AlN substrates with lasing thresholds as low as 6 kW/cm 2 is demonstrated via the reduction …
AlN substrates with lasing thresholds as low as 6 kW/cm 2 is demonstrated via the reduction …
Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy
TD Moustakas - MRS Communications, 2016 - cambridge.org
This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …