Defect centers in insulators play a critical role in creating important functionalities in
materials: prototype qubits, single-photon sources, magnetic field probes, and pressure …

Normally, it is hard to regulate thermal defects precisely in their host lattice due to the
stochastic nature of thermal activation. Here, we demonstrate a thermal annealing way to …

It has recently been demonstrated how the nitrogen dopant concentration in graphene can
be controlled spatially on the nano-meter scale using a molecular mask. This technique may …

Ultra-low temperature scanning tunnelling microscopy and spectroscopy (STM/STS)
achieved by dilution refrigeration can provide unrivalled insight into the local electronic …

We investigate the combination of nitrogen doping and vacancies in highly ordered pyrolytic
graphite (HOPG), to engineer defect sites with adjustable electronic properties. We combine …

Learning the electron scattering around atomic impurities is a fundamental step to fully
understand the basic electronic transport properties of realistic conducting materials …

Owing to the bipartite nature of honeycomb lattice, the electrons in graphene host valley
degree of freedom, which gives rise to a rich set of unique physical phenomena including …

We introduce a computationally efficient method based on the path integral formalism to
describe defect-modified graphene. By taking into account the entire Brillouin zone, our …

Theoretical studies of defects in graphene typically take one of three approaches: Density
Functional Theory (DFT) simulations for atomically-precise short-range features, exact …