The energy paradigms in many countries (eg Germany and Denmark) have experienced a
significant change from fossil-based resources to clean renewables (eg wind turbines and …

Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar
transistor (IGBT) modules during long-time operation. In the present work, the failure …

Bonding material is one weak point in power modules packaging, and can limit the lifetime
of power modules. Multiple bonding materials have been manufactured and applied in the …

The study presented in this paper contributes to the quantification of the correlations
between resistance degradation and Al metallization layer reconstruction observed in high …

Four-point probing of electrical parameters on various components of IGBT modules is
suggested as an approach for the estimation of degradation in stressed devices. By …

As power electronic devices have tendencies to operate at higher temperatures and current
densities, the demand for reliable and efficient packaging technologies are ever increasing …

One of the main failure modes of an insulated-gate bipolar transistor (IGBT) module is the
reconstruction of an aluminum (Al) metallization layer on the surface of the IGBT chip. In this …

Degradation of wire bonds under accelerated power cycling tests is compared to that
caused by mechanical high-frequency cycling for commercial power devices. Using micro …

In this paper the microscopical structure of wedge bonded interfaces is investigated, with a
focus on what effect the power in the ultrasonic bonding and the initial microscopical …

This paper presents a fundamental study on degradation of heavy Al bond wires typically
used in high power modules. Customized samples are designed to only consist of Al bond …