The aim of this paper is to design low-threshold variation, four-state/two-bit Si/SiGe quantum-
well n-and p-channel spatial wavefunction-switched field-effect transistors (SWS-FETs). This …

This paper presents the design and simulation of static random access memory (SRAM)
using two channel spatial wavefunction switched field-effect transistor (SWS-FET), also …

Unlike conventional FETs, spatial wavefunction switched (SWS)-FETs are comprised of two
or more vertically stacked coupled quantum well or quantum dot channels, and the spatial …

This paper aims to design and simulate a compact dynamic random access memory
(DRAM) cell using two-channel spatial wavefunction switched (SWS) field-effect transistor …

Multivalued memory increases the bits-per-cell storage capacity over conventional one
transistor (1T) MOS based dynamic random-access memory (DRAM) by storing more than …

This paper presents Spatial Wavefunction Switched (SWS)-FETs have been proposed to
implement ternary and quaternary logic, 2-bit DRAM cells, and static random-access …

This paper evaluates the propagation delay of a four-state/two-bit spatial wavefunction-
switched field-effect transistors (SWS) FET-based inverter. The SWS-FET has two or more …

This paper presents simulation of spatial wavefunction switched (SWS) field-effect
transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog …

Static random-access memory (SRAM) is an essential component in the architecture of
modern microprocessors and VLSI circuits. The problems of high power consumption, large …

This paper presents the design and simulation of static random access memory (SRAM)
using Quantum Dot Channel Field-Effect Transistors (QDC-FETs). A QDC-FET consist of two …