Tunnel field effect transistor for ultra low power applications: a review
Tunnel Field Effect Transistor (TFET) has emerged as a promising candidate for applications
in low power VLSI/ULSI circuit design. TFETs have shown better performance in terms of …
in low power VLSI/ULSI circuit design. TFETs have shown better performance in terms of …
Influence of gate and channel engineering on multigate tunnel FETs: a review
The continuous progress in the development of tunnel field-effect transistors (TFETs) by
replacing the conventional metal-oxide field-effect transistors is to satisfy the development of …
replacing the conventional metal-oxide field-effect transistors is to satisfy the development of …
An analytical model of drain current in a nanoscale circular gate TFET
R Goswami, B Bhowmick - IEEE Transactions on Electron …, 2016 - ieeexplore.ieee.org
This paper presents an analytical model of drain current in a silicon tunnel FET with a
circular gate (CG TFET). The method involves the bifurcation of the complete geometry into a …
circular gate (CG TFET). The method involves the bifurcation of the complete geometry into a …
Numerical simulation of hetero dielectric trench gate JAM gate-all-around FET (HDTG-JAM-GAAFET) for label free biosensing applications
S Yadav, S Rewari - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
The label free detection of various biomolecules associated with different diseases has been
proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric …
proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric …
Analytical modelling and simulation of drain doping engineered splitted drain structured TFET and its improved performance in subduing ambipolar effect
The study presents an analytical model for the potential distribution of a drain doping
engineered 2D tunnelling field effect transistor (TFET) with splitted drain structure. Hence …
engineered 2D tunnelling field effect transistor (TFET) with splitted drain structure. Hence …
Demonstration of T-shaped channel tunnel field-effect transistors
In this paper we have proposed a novel structure T-shaped channel TFET., which is
experimentally demonstrated for the first time and investigated its performance and conduct …
experimentally demonstrated for the first time and investigated its performance and conduct …
Effect of pocket intrinsic doping on double and triple gate tunnel field effect transistors
Band-to-band tunneling at the source–channel junction of multigate tunnel field effect
transistors (TFETs) plays a major role to boost ON current for eliminating short channel …
transistors (TFETs) plays a major role to boost ON current for eliminating short channel …
[PDF][PDF] 3D analytical modeling of surface potential and threshold voltage model of Dm Fintfet with dual hetero gate oxide structure
AD Ne, J Undrakondaf, SR Ijjadag - Turkish Journal of Computer and …, 2021 - academia.edu
This paper proposed on basis of a perimeter-weighted-sum method for the construction of a
3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide …
3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide …
Study and suppression of ambipolar effect in multilayer phosphorene tunnel field effect transistors using double gate structure
We present a comprehensive study of ambipolar effect in multilayer phosphorene tunnel
field-effect transistors (TFETs). Phosphorene is a promising 2D material with tunable …
field-effect transistors (TFETs). Phosphorene is a promising 2D material with tunable …
Analytical model for ID-VD characteristics of a triple metal double gate TFET
In the present era of nano dimensional devices, several non-conventional device structures
are being proposed by researchers to satisfy the trend of continuous device dimension down …
are being proposed by researchers to satisfy the trend of continuous device dimension down …