Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

(57) ABSTRACT A method for controlling How and concentration of a liquid precursor
includes: supplying a carrier gas to a? rst auto pressure regulator and outputting therefrom …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Atomic layer growth of hafnium dioxide from HfCl4 and H2O has been studied at substrate
temperatures ranging from 180–600° C. A quartz crystal microbalance was used for the real …

The drive toward smaller and smaller electronic componentry has huge implications for the
materials currently being used. As quantum mechanical effects begin to dominate …

TiO 2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-
dimethylamino titanium and ozone. Amorphous TiO 2 film was deposited at a low substrate …

Titanium dioxide thin films were grown by atomic layer deposition (ALD) at 200–400° C from
a new titanium precursor, titanium tetramethoxide, and water. As compared with other …

The pore diameters in alumina tubular membranes were progressively reduced via SiO2
and TiO2 atomic layer deposition (ALD) using sequential surface reactions. The SiO2 ALD …

Reaction mechanisms in the atomic layer deposition of Al2O3 from Al (CH3) 3 and water
were studied with a quartz crystal microbalance at 150− 350° C and with a quadrupole mass …