5,061,644 5,079,616 5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947
5,156,995 5,159,413 5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 …

(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …

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5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947 5,156,995 5,159,413
5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …

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5,034,337 A 7, 1991 Mosher et al. 5,061,644 A 10, 1991 Yue et al. 5,091,333 A 2f1992 Fan
et al. 5,091,767 A 2f1992 Bean et al. 5,093,699 A 3, 1992 Weichold et al. 5,105,247 A …

Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited
area regions having upper por tions Substantially exhausted of threading dislocations, as …

4,551.394 A 11/1985 Betsch et al. 4,651,179 A 3, 1987 Reichert 4,727,047 A 2f1988 Bozler
et al. 4,774,205 A 9, 1988 Choi et al. 4,789,643 A 12/1988 Kajikawa et al. 4,826,784. A …