This work reports a comparative analysis of different cavity positions in Charge Plasma-
based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we …

A new FoM to investigate a carefully engineered Schottky barrier (SB) TFET by accounting
for dc power consumption, and silicon area, which are the key consideration for energy …

In this paper, to solve an important issue of low ON-state current in the nickel silicide (NiSi)
metal source/drain Schottky barrier (SB) MOSFET (SBMOS), we have reported a novel …

In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …

This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET)
as label free biosensor applications. In a proposed device, we have created a nanogap …

In this paper, for the first time, a novel ferroelectric schottky barrier tunnel FET (Fe SB-TFET)
is proposed and investigated. The Fe SB-TFET consists of ferroelectric gate stack with highly …

Thin film transistors (TFTs) with anatase-TiO 2 channel material deposited on an SiO 2/Si
substrate by atomic layer deposition are fabricated to investigate the effect of the …

For the first time, a distinctive approach to design and investigate double‐gate Schottky
Barrier MOSFET (DG SB‐MOSFET) using gate engineering is reported. Three isolated gates …

In this paper, a simulation study to suppress the ambipolar current of the Schottky Barrier
(SB) MOSFET is presented. In this work, a dual metal gate device structure is used. The gate …

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB)
MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the …