Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …

Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …

In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

This article presents the cryogenically cooled application for wide bandgap (WBG)
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …

High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

New packaging solutions and power module structures are required to fully utilize the
benefits of emerging commercially available wide bandgap semiconductor devices …

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their
excellent switching performance. To maximize the performance of GaN devices, it is …

The multichip power module is an irreplaceable component for high-capacity industrial
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …

Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …