Reconfigurable field effect transistors: A technology enablers perspective
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
Nanomechanical modeling of the bending response of silicon nanowires
S Zare Pakzad, M Nasr Esfahani… - ACS Applied Nano …, 2023 - ACS Publications
Understanding the mechanical behavior of silicon nanowires is essential for the
implementation of advanced nanoscale devices. Although bending tests are predominantly …
implementation of advanced nanoscale devices. Although bending tests are predominantly …
Reconfigurable field effect transistors design solutions for delay-invariant logic gates
G Galderisi, T Mikolajick… - IEEE Embedded Systems …, 2022 - ieeexplore.ieee.org
Reconfigurable field effect transistors (RFETs) are an emerging technology platform that
offers the possibility to merge-type and-type functionalities in a single device. From the …
offers the possibility to merge-type and-type functionalities in a single device. From the …
A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with
the continuous shrinking of device technology. Even the small fluctuations have become …
the continuous shrinking of device technology. Even the small fluctuations have become …
Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In–Ga–Zn–O Active Channel
A nanoscale vertical-channel thin film transistor (V-TFT) with a channel length shorter than
160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films …
160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films …
On the operation modes of dual-gate reconfigurable nanowire transistors
B Sun, B Richstein, P Liebisch, T Frahm… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We investigate the operation modes of a dual-gate reconfigurable field-effect transistor
(RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic …
(RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic …
Investigation of the Bending Behavior in Silicon Nanowires: A Nanomechanical Modeling Perspective
Nanowires play a pivotal role across a spectrum of disciplines such as
nanoelectromechanical systems, nanoelectronics, and energy applications. As nanowires …
nanoelectromechanical systems, nanoelectronics, and energy applications. As nanowires …
Impact of process fluctuations on RF small-signal parameter of gate-all-around nanosheet transistor beyond 3 nm node
Y Sun, H Gao, X Li, X Yang, Z Liu, Y Liu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In the present work, the variations of RF small-signal model parameters induced by the
intrinsic process fluctuations are investigated in gate-all-around (GAA) nanosheet transistor …
intrinsic process fluctuations are investigated in gate-all-around (GAA) nanosheet transistor …
Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs
In this study, we report the process variation effect (PVE) including the work function
fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon …
fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon …
Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node
H Ye, J Hu, Z Liu, C Wang, X Li, Y Shi… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this work, a novel stacked nanosheet reconfigurable field effect transistor with extended
source/drain (ESD-NSRFET) is proposed to improve ON-current (), where an additional …
source/drain (ESD-NSRFET) is proposed to improve ON-current (), where an additional …