We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …

In this article, we present the dynamics and modeling of multidomains in the ferroelectric
FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit …

In this paper, we have studied the effect of back gate bias technique in negative capacitance
field effect transistor. In N-NCFET, OFF current decreases and threshold voltage increases …

Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture.
These multidomains in the ferroelectric (FE) cause the 2-D gradients in local polarization …

Measurements on ultrathin body negative-capacitance (NC) field-effect transistors are
shown to display subthreshold behaviors that cannot be explained as a classical MOSFET …

We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric
tunnel junction (FTJ) in part-I of this work. Here, we have used the 2-D potential functions …

In this paper, a Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-
FE-FET) has been proposed and assessed in terms of RF/analog specifications for varied …

The impact of negative capacitance (NC) of the ferroelectric materials in controlling the direct
source to drain tunneling (DSDT) in ultra-short channel FETs is presented in this paper …

The channel doping effects in negative capacitance field-effect transistors (NCFETs) of the
metal-ferroelectric-insulator-semiconductor (MFIS) structure are analysed in this work, and …

The gate-induced drain leakage (GIDL) current is one of the important short channel effects.
It is very significant to study the GIDL current (I GIDL) in negative capacitance-based FETs …