Material processing, performance and reliability of MoS2 field effect transistor (FET) technology-A critical review
In last the decade, Molybdenum-di-sulphide (MoS 2) based field effect transistors (FETs)
combined with the advancements in integrated circuit (IC) technology have found versatile …
combined with the advancements in integrated circuit (IC) technology have found versatile …
Potential of transition metal dichalcogenide transistors for flexible electronics applications
Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good
charge carrier mobility, ultimate dimension down‐scalability, and low‐temperature …
charge carrier mobility, ultimate dimension down‐scalability, and low‐temperature …
Button shear testing for adhesion measurements of 2D materials
Abstract Two-dimensional (2D) materials are considered for numerous applications in
microelectronics, although several challenges remain when integrating them into functional …
microelectronics, although several challenges remain when integrating them into functional …
High‐Performance Monolayer MoS2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO2 Gate Dielectric
Trap states of the semiconductor/gate dielectric interface give rise to a pronounced
subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic …
subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic …
A second nearest-neighbor modified embedded-atom method combined with a charge equilibration interatomic potential for the Al-O binary system
An interatomic potential for the Al-O binary system has been developed within the formalism
of the second nearest-neighbor modified embedded atom method (2NNMEAM) potential …
of the second nearest-neighbor modified embedded atom method (2NNMEAM) potential …
P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits
Z Cheng, X Jia, B Han, M Li, W Xu, Y Li… - … Applied Materials & …, 2024 - ACS Publications
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising
materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have …
materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have …
Crystalline ZrO2 films with reduced oxygen vacancy and surface roughness for corrosion protection by atomic layer deposition
ZrO 2 coating is widely used for ensuring protection against corrosion and diffusion. Thus, a
uniform coating of a high-quality film is key to protecting parts exposed to corrosive gas …
uniform coating of a high-quality film is key to protecting parts exposed to corrosive gas …
Molybdenum Disulfide Transistors Bearing All-2D-Material Interfaces: Device Performance Optimization and Influences of Interfaces and Passivation Layers
CJ Chang, BH Chen, TH Chang… - ACS Applied …, 2023 - ACS Publications
Two-dimensional (2D) materials are only a few atomic layers thick, which means that these
materials will be severely influenced by various non-2D-material interfaces after device …
materials will be severely influenced by various non-2D-material interfaces after device …
Dielectric‐Doped 2D Tellurium Diodes for Zero‐Bias Radio Frequency Power Detection
This work presents a 2D tellurium (Te)‐based diode that exploits the doping achieved by
atomic layer deposited (ALD) Al2O3 to enhance its rectifying performance. The proposed …
atomic layer deposited (ALD) Al2O3 to enhance its rectifying performance. The proposed …
Modulation of electronic properties and energy band alignments of h-BN/MoS2 heterostructures with different torsion angles by biaxial strain and electric field
J Hu, H Xu, F Wang, Y Qu, Y Liu - Materials Science in Semiconductor …, 2024 - Elsevier
In recent years, regulating the photoelectric properties of two-dimensional 2D/2D van der
Waals (vdW) heterostructures through different means has become a research focus. In this …
Waals (vdW) heterostructures through different means has become a research focus. In this …