Parasitic capacitive couplings in medium voltage power electronic systems: An overview

BF Kjærsgaard, G Liu, MR Nielsen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

High-Power Electronic Applications Enabled by Medium Voltage Silicon-Carbide Technology: An Overview

MR Nielsen, S Deng, AB Mirza… - … on Power Electronics, 2024 - ieeexplore.ieee.org
With the electrification of society and the green transition, the need for efficient high-power
electronic converters (PEC) to support the electricity demand is at an all-time high. A key …

Voltage balancing of series-connected SiC MOSFETs with adaptive-impedance self-powered gate drivers

R Wang, AB Jørgensen, W Liu, H Zhao… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Passive clamping snubbers for voltage balancing (VB) series-connected power devices
exhibit strong applicability and high robustness; moreover, they are particularly suitable for …

Fault-tolerant control and isolation method for npc-based afec using series-connected 10kv sic mosfets

S Isik, S Parashar, S Bhattacharya - IEEE Access, 2022 - ieeexplore.ieee.org
Power Conditioning Systems (PCS) based on three-level converters with series-connected
10kV SiC MOSFETs have gained popularity for medium voltage applications with the …

Analysis and flexible DV/DT control of an active clamping topology for series-connected SiC MOSFETs

F Zhang, Y Zheng, X Zhang, X Yang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Series-connection of SiC mosfet s is an attractive solution to build cost effective and high
efficiency medium voltage converters, however, the unequal voltage sharing among the …

Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs

L Tang, H Jiang, R Liao, Y Huang… - … on Power Electronics, 2024 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) metal oxide semiconductor field effect transistors
(mosfet s) is an efficient solution for high-capacity power converters. However, a more or …

Performance comparison of 10 kv and series-connected 3.3 kv sic mosfets based vscs for mv grid interfacing applications

RK Kokkonda, S Parashar… - 2023 IEEE Applied …, 2023 - ieeexplore.ieee.org
The latest HV SiC devices can significantly improve the efficiency and power density of MV
grid interfacing converters. A VSC (Voltage Source Converter) with 7.2 kV dc bus can …

A Hybrid Current-and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs

TN Ubostad, DA Philipps… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect
transistors (mosfet s) is an attractive way of increasing the blocking voltage capability of a …

Startup Analysis and Design of Self-Powered Auxiliary Power Supply in Input-Series System With Small Submodule Capacitance

R Wang, AB Jorgensen, W Liu, H Zhao… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
For filling higher input voltage requirement, the input-series system based on attainable
power devices is prevalent in industry. Specifically, its auxiliary power supply (APS) is self …

Auxiliary Power Supply Startup Evaluation and Improvement of the Input-series System with Small Submodule Capacitances

R Wang, ABØ JØrgensen, W Liu, H Zhao… - 2023 IEEE Applied …, 2023 - ieeexplore.ieee.org
Input-series systems are prevalent for industrial applications for satisfying the high input-
voltage requirement. In addition to their topology and modulation design, the auxiliary power …