GaAs-based broad-area diode lasers are needed with improved lateral beam parameter
product (BPP lat) at high power. An experimental study of the factors limiting BPP lat is …

This review presents the basic ideas and some examples of the chip technology of high-
power diode lasers (λ= 650 nm− 1060 nm) in connection with the achievements of mounted …

The implementation of infrared imaging for the purpose of thermal analysis of semiconductor
lasers is demonstrated. The experimental results obtained in the different spectral bands …

The transient thermal properties of high-power diode laser bars with active and passive
cooling are analyzed. Both thermal imaging and the analysis of the thermal wavelength …

Effective thermal control systems are essential for the reliable working of insulated gate
bipolar transistors (IGBTs) in many applications. A novel spray cooling loop system with …

Optical power from 1100 nm broad-area laser diodes is found to be limited by the
accumulation of minority carriers in the waveguide layer, caused by a small effective barrier …

The implementation of the thermoreflectance technique for the analysis of facet heating in
commercial high-power laser bars is demonstrated. The technique provides highly spatially …

To improve the heat management of high-power diode lasers, a microchannel heat sink is
obtained, whose structure is optimized in method of numerical simulation. Following such a …

An analytical, two-dimensional, stationary model of heat distribution in a broad-area laser is
discussed. In the model the laser is treated as a stack of layers of different thicknesses and …

摘要针对微通道热沉封装半导体激光列阵(LDA) 建立三维有限元热分析模型, 对其在20%
高占空比工作时的瞬态和稳态温度分布进行模拟分析. 模拟结果表明加电流后的几十微秒内有源 …