The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We investigate the polarization anisotropy of the photoluminescence of an M-plane (11̄00)
In 0.1 Ga 0.9 N/GaN multiple quantum well grown on γ-LiAlO 2 (100) by molecular-beam …

Using high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction, we
investigated the strain relaxation mechanisms for nonpolar (11− 20) a-plane ZnO epitaxy on …

We study the adsorption and desorption kinetics of Ga on GaN (11 0 0) in molecular-beam
epitaxy using in situ reflection high-energy electron diffraction. Two stable surface phases …

Polarization-sensitive photodetectors for the ultraviolet spectral range based on M-plane
GaN films grown on Li Al O 2 substrates have been fabricated and characterized. These …

The authors demonstrate a photodetection configuration where the responsivity in the
ultraviolet spectral region is limited to a few nanometers, representing high-quality-factor …

Group-III nitrides are considered to be a strategic technology for the development of
ultraviolet photodetectors due to their remarkable properties in terms of spectral selectivity …

Semipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One
of the reasons is that a better optical transition probability is expected because of weaker …

The photoelectric effects of LiTaO 3 (LTO) single crystals are experimentally studied with two
kinds of LTO wafers, 10 tilted and untilted, at room temperature. A transient open-circuit …